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We report on detailed investigations of the electronic and magneticproperties of ferromagnetic GaMnAs layers, which have been fabricated bylow-temperature molecular-beam epitaxy. Superconducting quantum interferencedevice measurements reveal a decrease of the Curie temperature from the surfaceto the GaMnAs/GaAs interface. While high resolution x-ray diffraction clearlyshows a homogeneous Mn distribution, a pronounced decrease of the carrierconcentration from the surface towards the GaMnAs/GaAs interface has been foundby Raman spectroscopy as well as electrochemical capacitance-voltage profiling.The gradient in Curie temperature seems to be a general feature of GaMnAslayers grown at low-temperature. Possible explanations are discussed.Comment: 3 pages, 4 figures, submitted to AP

Curie temperature and carrier concentration gradients in epitaxy-grown Ga1−xMnxAs layers