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We present a theoretical analysis and numerical simulations of lateralcurrent density fronts in bistable resonant-tunneling diodes with Z-shapedcurrent-voltage characteristics. The bistability is due to the chargeaccumulation in the quantum well of the double-barrier structure. We focus onasymmetric structures in the regime of sequential incoherent tunneling andstudy the dependence of the bistability range, the front velocity and the frontwidth on the structure parameters. We propose a sectional design of a structurethat is suitable for experimental observation of front propagation and discusspotential problems of such measurements in view of our theoretical findings. Wepoint out the possibility to use sectional resonant-tunneling structures ascontrollable three-terminal switches.Comment: to appear in J.Appl.Phy

Lateral current density fronts in asymmetric double-barrier resonant-tunneling structures