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We report a clear correspondence between changes in the Curie temperature andcarrier density upon annealing in epitaxially grown (Ga,Mn)As layers withthicknesses in the range between 5 nm and 20 nm. The changes are dependent onthe layer thickness, indicating that the (Ga,Mn)As - GaAs interface hasimportance for the physical properties of the (Ga,Mn)As layer. Themagnetoresistance shows additional features when compared to thick (Ga,Mn)Aslayers, that are at present of unknown origin.Comment: 9 pages, 3 figure

Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films