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Electronic noise has been investigated in AlxGa1−xN/GaN modulation-doped field-effect transistors of submicron dimensions, grown by molecular beam epitaxy techniques. Some 20 devices were grown on a sapphire substrate. Conduction takes place in the quasi-two-dimensional (2D) layer of the junction (xy plane) which is perpendicular to the triangular quantum well (z direction). A nondoped intrinsic buffer layer separates the Si-doped donors in the AlxGa1−xN layer from the 2D transistor plane. Since all contacts must reach through the AlxGa1−xN layer to connect internally to the 2D plane, parallel conduction through this layer is a feature of all modulation-doped devices. The excess noise has been analyzed as a sum of Lorentzian spectra and 1/fα noise. The Lorentzian noise is ascribed to trapping of the carriers in the AlxGa1−xN layer. The trap depths have been obtained from Arrhenius plots of log(τT 2) versus 1000/T. Comparison with previous noise results for GaAs devices shows that: (a) many more trapping l...

Generation–recombination noise in gallium nitride-based quantum well structures