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We present a study of p-type doping of CdTe and Cd$_{1-x}$Mn$_x$Te quantumwells from surface states. We show that this method is as efficient as usualmodulation doping with nitrogen acceptors, and leads to hole densitiesexceeding $2 \times 10^{11}$ cm$^{-2}$. Surface doping was successfully appliedto obtain carrier-induced ferromagnetism in a Cd$_{1-x}$Mn$_x$Te quantum well.The observed temperature dependence of photoluminescence spectra, and thecritical temperature, correspond well to those previously reported forferromagnetic quantum wells doped with nitrogen.Comment: 4 figure

p-type doping of II–VI heterostructures from surface states: Application to ferromagnetic Cd1−xMnxTe quantum wells