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We investigated the size dependence of the ground state energy inself-assembled InAs quantum dots embedded in resonant tunneling diodes.Individual current steps observed in the current-voltage characteristics areattributed to resonant single-electron tunneling via the ground state ofindividual InAs quantum dots. The onset voltage of the first step observed isshown to decrease systematically from 200 mV to 0 with increasing InAscoverage. We relate this to a coverage-dependent size of InAs dots grown onAlAs. The results are confirmed by atomic force micrographs andphotoluminescence experiments on reference samples.Comment: 3 pages, 3 figure

Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters