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Intentionally-produced inversion domain boundaries in GaN have been reportedto be highly efficient recombination centers. Here I report a rationale forthis phenomenon based on ab initio density-functional calculations. I alsopropose a model, based on the existence of polarization in GaN, of theobservation that a domain boundary acts as a rectifying junction under voltageapplied between the two opposite-polarity surfaces.Comment: RevTeX 4 pages, 4 eps figure

Origin of the efficient light emission from inversion domain boundaries in GaN