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An optimized heterostructure design and an optimized surface sputter-cleaning procedure allow the growth of high-quality epitaxial Fe(001) thin films at Ts<∼50 °C on selectively doped GaAs/Al0.35Ga0.65As heterostructures, while retaining the high quality transport property of the two-dimensional electron gas. Magneto-optic Kerr effect measurements and model calculations indicate a dominant uniaxial in-plane anisotropy (easy axis along [110], hard axis along [1−10]) and small coercivity (∼15 Oe). Interface sensitive 57Fe Mossbauer measurements prove the absence of both magnetic “dead layers” and “half-magnetization” phases (compared to pure Fe), and provide evidence for intermixing within a few monolayers, retaining, however, a metallic Fe state and high Fe magnetic moments at the interface.

Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas heterostructures