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An approach is developed for the determination of the current flowing througha nanosize silicon-on-insulator (SOI) metal-oxide-semiconductor field-effecttransistors (MOSFET). The quantum mechanical features of the electron transportare extracted from the numerical solution of the quantum Liouville equation inthe Wigner function representation. Accounting for electron scattering due toionized impurities, acoustic phonons and surface roughness at the Si/SiO2interface, device characteristics are obtained as a function of a channellength. From the Wigner function distributions, the coexistence of thediffusive and the ballistic transport naturally emerges. It is shown that thescattering mechanisms tend to reduce the ballistic component of the transport.The ballistic component increases with decreasing the channel length.Comment: 21 pages, 8 figures, E-mail addresses: devreese@uia.ua.ac.b

Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor