English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Open

Presents the pdf analysis as premium feature

PDF Analysis

Insights

Presents the summarisation as premium feature

Summarisation

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Spin-dependent tunnel junctions with Co75Fe25 electrodes and a Fe50Mn50 pinning layer were fabricated with tunneling magnetoresistance of about 20% at room temperature. The Al2O3 barriers were formed by ultra-violet light assisted oxidation. The resistance x area (RxA) product was about 375 kOmega mum(2) in the parallel alignment of the magnetizations. The effect of barrier impurities has been investigated via tunneling conductance as a function of temperature and bias voltage for as-deposited and annealed samples. The spin wave parameter alpha was determined to be 3.06x10(-5) and 2.03x10(-5) K-3/2 before and after annealing, respectively. The improved barrier properties after annealing are explained by inelastic hopping via several localized states and reduced magnon scattering. We propose a qualitative model of the barrier homogenization during annealing which supports former Rutherford backscattering and x-ray photoelectron spectroscopy studies. (C) 2002 American Institute of Physics

Magnon scattering and tunneling through localized states in magnetic tunnel junctions