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Binary collision simulations of high-fluence 1 keV Si ion implantation into 8nm thick SiO2 films on (001)Si were combined with kinetic Monte Carlosimulations of Si nanocrystal (NC) formation by phase separation duringannealing. For nonvolatile memory applications, these simulations help tocontrol size and location of NCs. For low concentrations of implanted Si, NCsform via nucleation, growth and Ostwald ripening, whereas for highconcentrations Si separates by spinodal decomposition. In both regimes, NCsform above a thin NC free oxide layer at the SiO2/Si interface. This,self-adjusted layer has just a thickness appropriate for NC charging by directelectron tunneling. Only in the nucleation regime the width of the tunnelingoxide and the mean NC diameter remain constant during a long annealing period.This behavior originates from the competition of Ostwald ripening and Si lossto the Si/SiO2 interface. The process simulations predict that, for nonvolatilememories, the technological demands on NC synthesis are fulfilled best in thenucleation regime.Comment: RevTeX4, 3 pages, 3 figures, to be published in Appl. Phys. Let

Size and location control of Si nanocrystals at ion beam synthesis in thin SiO2 films