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Pulsed-laser deposition has been used to grow epitaxial thin films of thegiant-dielectric-constant material CaCu_3Ti_4O_{12} on LaAlO_3 and SrTiO_3substrates with or without various conducting buffer layers. The latter includeYBa_2Cu_3O_7, La_{1.85}Sr_{0.15}CuO_{4+\delta} and LaNiO_3. Above 100K - 150Kthe thin films have a temperature independent dielectric constant as do singlecrystals. The value of the dielectric constant is of the order of 1500 over awide temperature region, potentially making it a good candidate for manyapplications. The frequency dependence of its dielectric properties below 100K- 150K indicates an activated relaxation process.Comment: 11 pages, 4 figure

Epitaxial thin films of the giant-dielectric-constant material CaCu3Ti4O12 grown by pulsed-laser deposition