English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

A number of evidences suggests that thick-film resistors are close to ametal-insulator transition and that tunneling processes between metallic grainsare the main source of resistance. We consider as a minimal model fordescription of transport properties in thick-film resistors a percolativeresistor network, with conducting elements governed by tunneling. For bothoriented and randomly oriented networks, we show that the piezoresistiveresponse to an applied strain is model dependent when the system is far awayfrom the percolation thresold, while in the critical region it acquiresuniversal properties. In particular close to the metal-insulator transition,the piezoresistive anisotropy show a power law behavior. Within this region,there exists a simple and universal relation between the conductance and thepiezoresistive anisotropy, which could be experimentally tested by commoncantilever bar measurements of thick-film resistors.Comment: 7 pages, 2 eps figure

Anisotropic random resistor networks: A model for piezoresistive response of thick-film resistors