English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

The interfacial reaction of Ni with relaxed Si1−xGex (x=0.2,0.3) films in the low temperature range, viz., 300–500 °C, has been investigated and compared with that of Ni with Si (i.e., x=0). Ni2(Si1−xGex) and Ni3(Si1−xGex)2 were observed at 300 °C whereas a uniform film of Ni(Si1−xGex) was formed at 400 °C for both Si0.8Ge0.2 and Si0.7Ge0.3 substrates. At 500 °C, a mixed layer consisting of Ni(Si1−yGey) and Si1−zGez was formed with a relation of z>x>y. Sheet resistance measurement results show that the silicided film attains its lowest value at an annealing temperature of 400 °C. The approximate values of the resistivity of the corresponding uniform Ni(Si1−xGex) (x=0.2, 0.3) derived from the transmission electron microscope and sheet resistance results are 19 and 23 μΩ cm, respectively.

Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing