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Positron lifetime, Photoluminescence and Hall measurements were performed tostudy undoped p-type gallium antimonide materials. A 314ps lifetime component,attributed to $V_{Ga}$ related defect, was identified in the positron lifetimemeasurement. In the PL measurement, a $778meV$ and a $797meV$ peaks wereobserved. Isochronal annealing studies were performed and at the temperature of$300^{o}C$, both the 314ps positron lifetime component and the two PL signalsdisappeared, which gives a clear and strong evidence for their correlation.However, the hole concentration ($\sim 2\times 10^{17}cm^{-3}$) was observed tobe constant throughout the whole annealing temperature range up to $500^{o}C$.Contradictory to general belief, this implies, at least for samples withannealing temperatures above $300^{o}C$, the Ga vacancy is not the acceptorresponsible for the p-type conduction.Comment: 3 pages, 3 figure

Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence