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Epitaxial germanium layers doped near the metal–insulator transition were grown by liquid phase epitaxy from a Pb melt. Far-infrared absorption was measured between ∼20 cm−1 and 150 cm−1. Linear optical absorption coefficients were determined for Ge:Sb in the doping range of 9.0×1014 cm−3 200 μm) in blocked impurity band detectors is discussed.

Far-infrared absorption in Sb-doped Ge epilayers near the metal–insulator transition