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Reflection–absorption infrared spectroscopy has been employed to observe Si–H bonds within a model, ultrathin silicon oxide. Upon heating a monolayer of H8Si8O12/Si(100−2×1to700 °C,H8Si8O12/Si(100−2×1to700 °C, Si–H bonds as a part of HSiO3HSiO3 entities are still detected within the oxide layer after cooling. These fragments appear to be stable to temperatures of at least 850 °C. Reversible hydrogen/deuterium exchange for these entities is also directly observed. © 2002 American Institute of Physics

Reflection–absorption infrared investigation of hydrogenated silicon oxide generated by the thermal decomposition of H8Si8O12 clusters