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The microwave surface resistance Rs of MgB2 films with the zero-resistancetemperature of - 39 K was measured at 8.0 - 8.5 GHz. The MgB2 films wereprepared by deposition of boron films on c-cut sapphire, followed by annealingin a vaporized magnesium environment. The Rs appeared significantly reduced byion milling of the as-grown MgB2 film surface, with the observed Rs of ~ 0.8mohm at 24 K for an ion-milled MgB2 film as small as 1/15 of the value for thecorresponding as-grown MgB2 film. The reduced Rs of the ion-milled MgB2 filmsis attributed to the effects of the Mg-rich metallic layer existing at thesurfaces of the as-grown MgB2 films.Comment: 3 pages, 4 figure

Significant reduction of the microwave surface resistance of MgB2 films by surface ion milling