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We demonstrate that X-ray irradiation can be used to induce aninsulator-metal transition in Si-doped Al$_{0.35}$Ga$_{0.65}$As, asemiconductor with {\it DX} centers. The excitation mechanism of the {\it DX}centers into their shallow donor state was revealed by studying thephotoconductance along with fluorescence. The photoconductance as a function ofincident X-ray energy exhibits an edge both at the Ga and As K-edge, implyingthat core-hole excitation of Ga and As are efficient primary steps for theexcitation of {\it DX} centers. A high quantum yield ($\gg 1$) suggests thatthe excitation is indirect and nonlocal, due to secondary electrons, holes, andfluorescence photons.Comment: 3 pages of text, 6 figures. An error in Fig.5 was detected, so we  corrected i

X-ray induced persistent photoconductivity in Si-doped Al0.35Ga0.65As