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Superconducting magnesium diboride films with Tc0 ~ 24 K and sharp transition\~ 1 K were successfully prepared on silicon substrates by pulsed laserdeposition from a stoichiometric MgB2 target. Contrary to previous reports,anneals at 630 degree and a background of 2x10^(-4) torr Ar/4%H2 were performedwithout the requirement of Mg vapor or an Mg cap layer. This integration ofsuperconducting MgB2 films on silicon may thus prove enabling insuperconductor-semiconductor device applications. Images of surface morphologyand cross-section profiles by scanning electron microscopy (SEM) show that thefilms have a uniform surface morphology and thickness. Energy dispersivespectroscopy (EDS) reveals these films were contaminated with oxygen,originating either from the growth environment or from sample exposure to air.The oxygen contamination may account for the low Tc for those in-situ annealedfilms, while the use of Si as the substrate does not result in a decrease in Tcas compared to other substrates.Comment: 5 pages, 4 figures, 15 references; due to file size limit, images  were blure

Superconducting magnesium diboride films on Si with Tc0∼24 K grown via vacuum annealing from stoichiometric precursors