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We have studied the evolution of the magnetic, electronic, and structuralproperties of annealed epilayers of Ga1-xMnxAs grown by low temperaturemolecular beam epitaxy. Annealing at the optimal temperature of 250 C for lessthan 2 hours significantly enhances the conductivity and ferromagnetism, butcontinuing the annealing for longer times suppresses both. These data indicatethat such annealing induces the defects in Ga1-xMnxAs to evolve through atleast two different processes, and they point to a complex interplay betweenthe different defects and ferromagnetism in this material.Comment: 14 pages, pdf only, submitted to Applied Physics Letter

Effects of annealing time on defect-controlled ferromagnetism in Ga1−xMnxAs