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A novel continuous-compositional spread technique based on the non-uniformityof the deposition rate typically observed in Pulsed Laser Deposition (PLD) isintroduced. The approach uses the spatial variations in the deposition-ratenaturally occurring in PLD; therefore, there is no need for the masks typicallyused in combinatorial techniques. Consequently, combinatorial materialssynthesis can be carried out under optimized film growth conditions (e.g. athigh temperature). Additionally, lifting the need for post-annealing rendersthis method applicable to heat-sensitive materials and substrates (e.g. filmsof transparent oxides on polymer substrates). Composition determination acrossthe sample and mapping of physical properties onto the ternary phase diagram isachieved via a simple algorithm using the parameters that describe thedeposition-rate profiles. Results are shown for the high-temperature growth ofcrystalline perovskites (including (Ba,Sr)TiO3 and the formation of ametastable alloy between SrRuO3 and SrSnO3) and the room-temperature growth oftransparent conducting oxides.Comment: 6 pages, accepted for publication in Rev. Sci. Inst

Continuous compositional-spread technique based on pulsed-laser deposition and applied to the growth of epitaxial films