English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Open

Presents the pdf analysis as premium feature

PDF Analysis

Insights

Presents the summarisation as premium feature

Summarisation

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

The kinetics controlling the electrical transport inside the μc-Si tunnel-recombination junction (TRJ) of a-Si:H/a-Si:H tandem solar cells was studied in detail with computer simulations. Trap assisted recombination tunneling and Poole–Frenkel mechanisms were included in our analysis. Three different μc-Si tunnel junctions were investigated: (a) n-p, (b) n-oxide-p and (c) n-i-p. The highest theoretical efficiencies in a-Si:H/a-Si:H tandem cells were achieved with the n-i-p tunnel junction structure. The impact of the μc-Si effective masses, mobility gap, and mobilities in the tandem solar cell efficiency is also studied in this article. Several a-Si:H/a-Si:H tandem solar cells were made with the μc-Si tunnel configurations of types (b) and (c). In all of these samples one extra oxide layer was needed at the i-a-Si:H/n-μc-Si interface. Both tunnel junctions lead us to comparable experimental tandem solar cell efficiencies. When the n-i-p structure is implemented as TRJ in the a-Si:H/a-Si:H tandem solar cel...

Microcrystalline n-i-p tunnel junction in a-Si:H/a-Si:H tandem cells