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We observed room-temperature intersubband transitions at 1.26 microns inn-doped type-II In$_{0.3}$Ga$_{0.7}$As/AlAs strained quantum wells. An improvedtight-binding model was used to optimize the structure parameters in order toobtain the shortest wavelength intersubband transition ever achieved in asemiconductor system. The corresponding transitions occur between the firstconfined electronic levels of the well following mid-infrared optical pumpingof electrons from the barrier X-valley into the well ground state.Comment: To appear in Applied Physics Letter

1.26 μm intersubband transitions in In0.3Ga0.7As/AlAs quantum wells