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We propose a junction of metal and rare-earth compound semiconductor as thebasis for a possible efficient low-temperature thermoelectric device. If anoverlayer of rare earth atoms differing from the bulk is placed at theinterface, very high values of the figure of merit ZT can be reached at lowtemperature. This is due to sharp variation of the transmission coefficient ofcarriers across the junction at a narrow energy range, which is intrinsicallylinked to the localized character of the overlayer f-orbital.Comment: RevTeX 3.0, 4 pages, 3 postscript figures. To be published in Applied  Physics Letter

Thermoelectric properties of junctions between metal and strongly correlated semiconductor