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Interacting oscillations of the current, lattice temperature, and concentration of thermally generated\udelectron–hole pairs were discovered in silicon films of silicon-on-insulator structures upon their\udheating with extremely high current. The nature of the oscillations discovered is fundamentally\uddifferent from what has yet been known. They occur owing to two competing processes: the thermal\udgeneration of electron–hole pairs, and the pair concentration reduction caused by the current flowing through the silicon film with nonuniform temperature field. In our experiments the current density reached 1.5x10^5 A/cm2 and the specific power dissipated in the silicon film exceeded 3.6 GW/cm3.We observed the oscillation frequencies up to 3 MHz and variations of the current and pair concentration were more than tenfold, while the temperature varied from 700–740 to 950–1300 K

High-amplitude high-frequency oscillations of temperature, electron–hole pair concentration, and current in silicon-on-insulator structures