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Despite a large amount of data and numerous theoretical proposals, themicroscopic mechanism of transport in thick film resistors remains unclear.However, recent low temperature measurements point toward a possible variablerange hopping mechanism of transport. Here we examine how such a mechanismaffects the gauge factor of thick film resistors. We find that at sufficientlylow temperatures $T$, for which the resistivity follows the Mott's law$R(T)\sim \exp(T_0/T)^{1/4}$, the gauge factor GF is proportional to$(T_0/T)^{1/4}$. Moreover, the inclusion of Coulomb gap effects leads to ${\rmGF}\sim (T_0'/T)^{1/2}$ at lower temperatures. In addition, we study a simplemodel which generalizes the variable range hopping mechanism by taking intoaccount the finite mean inter-grain spacing. Our results suggest a possibleexperimental verification of the validity of the variable range hopping inthick film resistors.Comment: 7 pages, 3 eps figures, submitted to Journal of Applied Physic

Gauge factor of thick-film resistors: Outcomes of the variable-range-hopping model