English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We report on the investigation of Al single electron structures equipped withminiature (8 um long) on-chip Cr resistors of R > R_k = h/e^2 = 25.8 kOhm. Fromthe measurement of the Coulomb blockade in single-junction structures weevaluated the self-capacitance of our resistors per unit length, c = 62 aF/um.We demonstrate that the cotunneling current in the transistor samples in theCoulomb blockade regime obeys the power law, $I \propto V^{3+(R/R_k)}$,predicted by Odintsov, Bubanja and Sch\"on for a transistor having pureohmic-resistance leads. The concept of the three-junction single electron pumpwith on-chip resistors (R-pump) is developed. We demonstrate that theimplementation of the R-pump with a relative accuracy of the electron transferof 10^{-8} is quite feasible with the technology available.Comment: 6 pages of text and 7 figure

Coulomb blockade and cotunneling in single electron circuits with on-chip resistors: Towards the implementation of the R pump