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External electro-optic probes fabricated from two different crystal orientations of GaAs have been implemented in an electro-optic sampling system that is capable of mapping three independent orthogonal components of free-space electric fields. The results obtained for the radiated field from a microstrip patch antenna by the GaAs probes are compared with results on the same antenna obtained using bismuth silicate and lithium tantalate probes. An 8 μm spatial resolution has also been demonstrated for the electro-optic field-mapping system, and the capability for the system to measure field patterns at frequencies up to 100 GHz has been shown. © 2000 American Institute of Physics

Electro-optic field mapping system utilizing external gallium arsenide probes