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We report an anomalous temperature dependence of the photoluminescence (PL) spectrum of a 7 nm Ga0.72In0.28N0.028As0.972/GaAs single quantum well. The PL peak energy exhibits an inverted S-shape dependence with temperature. Below 100 K, the PL integrated intensity shows a temperature dependence similar to that of amorphous semiconductors. The observed anomalous behavior is explained by a strong localization of carriers at low temperatures that could be induced by the presence of nitrogen. Thermal annealing does not significantly change the anomalous temperature dependence.

Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well