English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

3 pages, 3 figures.-- PACS: 81.05.Ea; 68.65.+g;\ud78.55.Cr; 78.66.Fd; 68.35.Bs; 68.55.Jk; 81.15.Hi; 81.15.EfWe have studied the influence of InP buffer-layer morphology in the formation of InAs nanostructures grown on InP(001) substrates by solid-source molecular-beam epitaxy. Our results demonstrate that when InP buffer layers are grown by atomic-layer molecular-beam epitaxy, InAs quantum dot-like structures are formed, whereas InP buffer layers grown by MBE produce quantum-wire-like structures. The optical properties of these corrugated structures make them potential candidates for their use in light-emitting devices at 1.55 µm.The authors wish to acknowledge the Spanish\ud‘‘CICYT’’ for financial support under Project No. TIC96-\ud1020-C02.Peer reviewe

Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures