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We report on the operation of a single electron trap comprising a chain offour Al/AlOx/Al tunnel junctions attached, at one side, to a memory island and,at the other side, to a miniature on-chip Cr resistor R=50 kOhm which served tosuppress cotunneling. At appropriate voltage bias the bi-stable states of thetrap, with the charges differing by the elementary charge e, were realized. Atlow temperature, spontaneous switching between these states was found to beinfrequent. For instance, at T=70 mK the system was capable of holding anelectron for more than 2 hours, this time being limited by the time of themeasurement.Comment: 3 pages of text and 2 figure

Storage capabilities of a four-junction single-electron trap with an on-chip resistor