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We report growth of self-organized In0.4Ga0.6AsIn0.4Ga0.6As quantum dots on Si substrates by molecular-beam epitaxy. Low-temperature (17 K) photoluminescence spectra show that the optical properties of In0.4Ga0.6AsIn0.4Ga0.6As quantum dots grown on Si are comparable to quantum dots grown on GaAs substrates. We also present preliminary characteristics of In0.4Ga0.6AsIn0.4Ga0.6As quantum-dot lasers grown on Si substrates. Light versus current measurements at 80 K under pulsed bias conditions show that Ith=3.85 kA/cm2.Ith=3.85kA/cm2. The lasing spectral output has a peak emission wavelength of 1.013 μm and a linewidth (full width at half maximum) of ∼4 Å at the threshold. © 1999 American Institute of Physics

Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates