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It is shown that measurements of the effect of optical injection with an external laser on the spectral response of a semiconductor optical amplifier can probe intrinsic properties of a working device. The data demonstrate that under saturated gain conditions the carrier energy distribution within the active layer of a AlGaAs/GaAs amplifier neither shows spectral hole burning nor carrier heating, but only a decreased density.

Amplified spontaneous emission spectroscopy on semiconductor optical amplifiers subject to active light injection