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The light beam induced current (LBIC) technique was used to characterize the interface formed by the wet oxidation of AlAs and AlxGa1−xAsAlxGa1−xAs (x = 0.98(x=0.98 and 0.95). LBIC scans were used to calculate the diffusion lengths of minority carriers both in the bulk and near these interfaces; and the corresponding interface recombination velocities were estimated. The interface recombination velocity at the oxide/semiconductor interface is 3.13×105 cm/s3.13×105cm/s for AlAs, and 1.90×104 cm/s1.90×104cm/s for Al0.98Ga0.02As.Al0.98Ga0.02As. It is found that the addition of gallium in the AlAs can significantly improve this property. © 1997 American Institute of Physics

Recombination characteristics of minority carriers near the AlxOy/GaAs interface using the light beam induced current technique