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Here we propose and analyze the behavior of a FET--like switching device, theMott transition field effect transistor, operating on a novel principle, theMott metal--insulator transition. The device has FET-like characteristics witha low ``ON'' impedance and high ``OFF'' impedance. Function of the device isfeasible down to nanoscale dimensions. Implementation with a class of organiccharge transfer complexes is proposed.Comment: Revtex 11pages, Figures available upon reques

A field effect transistor based on the Mott transition in a molecular layer