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The influence of low-temperature annealing in H2O vapor on electron-cyclotron-resonance (ECR) grown SiGe oxides is reported. Annealing the oxides in H2O vapor at 280°C for 3 h 20 min, applied after annealing in forming gas at 450°C for 30 min, has several important effects: It reduces oxide leakage current by up to four orders of magnitude, decreases the density of interface states, and results in a low fixed oxide charge density of - 5.0× 1010 cm-2 in comparison to those of the films subjected to annealing in forming gas only. In addition, higher cumulative dielectric breakdown fields up to 8 MV/cm have been achieved. From the results obtained it is evident that vapor annealing is beneficial for ECR-grown SiGe oxides. © 1996 American Institute of Physics.published_or_final_versio

Improvement of SiGe oxide grown by electron cyclotron resonance using H2O vapor annealing