English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

We have determined the electric field dependence of the carrier capture coefficient of the EL2 traps in semi‐insulating GaAs up to 7 kV/cm by means of the quantitative analysis of propagating high electric field domains. The experimental data show a trapping coefficient which is proportional to the electron drift velocity, supporting the microscopic model of electric field enhanced trapping of carriers over a configurational barrier.

Electric field dependent EL2 capture coefficient in semi-insulating GaAs obtained from propagating high field domains