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Hydrogenated amorphous silicon films were deposited by ion‐beam‐assisted evaporation onto substrates maintained at 120 °C. The influence of the substrate bias was studied. By combined infrared spectrometry and thermal desorption spectrometry experiments, it is inferred that the bombardment of the growing a‐Si:H film by energetic hydrogen ions produces a densification of the material without modification of the Si:H bonding.

Densification of amorphous silicon prepared by hydrogen-ion-beam-assisted evaporation