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Accurate measurements of the InP refractive index as a function of free‐carrier doping are reported at 1.3 and 1.5 μm, the two strategic wavelengths for optical communications. A total of 21 samples with different N‐ and P‐doping levels have been measured using a novel and simplified grating‐coupling technique. In contrast to the conventional method, this only involves the use of a directly etched diffraction grating on the sample surface, thereby avoiding the necessity of a specific guiding layer. The measured index, in agreement with earlier predictions, decreases by more than 0.05 when the N doping is increased from below 1015 to about 1019 electrons per cubic centimeter. This effect, however, is much less pronounced with P doping than with N doping.

Carrier-induced change due to doping in refractive index of InP: Measurements at 1.3 and 1.5 μm