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Conduction‐band offsets in wide‐band‐gap CdZnSSe/ZnSSe single quantum well structures have been characterized by deep level transient spectroscopy (DLTS) measurements. 50 Å thick Cd0.3Zn0.7S0.06Se0.94 single quantum wells with ZnS0.06Se0.94 barriers were grown by molecular beam epitaxy on GaAs substrates. A thermal emission energy from the quaternary wells of 179±10 meV was measured. This corresponds to a conduction‐band offset energy of ∼251±20 meV. © 1996 American Institute of Physics

Conduction band offsets in CdZnSSe/ZnSSe single quantum wells measured by deep level transient spectroscopy