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3 pages, 3 figures.The roughening kinetics of copper films synthesized by low pressure chemical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scaling theory to the STM images, a steady growth roughness exponent (alfa)=0.81 ± 0.05 and a dynamic growth roughness exponent (beta)=0.62 ± 0.09 were determined. The value of (alfa)  is consistent with growth model predictions incorporating surface diffusion. The value of \ud(beta), while higher than expected from these models, can be related to LPCVD processing conditions favoring growth instabilities.This work was partially supported by the CSICCONICET\udcooperation program and by a grant from the\udNASA New Jersey Space Grant Consortium.Peer reviewe

Roughening kinetics of chemical vapor deposited copper films on Si(100)