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A method of the mid-IR-laser microscopy has been proposed for theinvestigation of the large-scale electrically and recombination active defectsin semiconductors and non-destructive inspection of semiconductor materials andstructures in the industries of microelectronics and photovoltaics. The basisfor this development was laid with a wide cycle of the investigations on thelow-angle mid-IR-light scattering in semiconductors. The essence of thetechnical idea was to apply the dark-field method for spatial filtering of thescattered light in the scanning mid-IR-laser microscope. This approach enabledthe visualization of large-scale electrically active defects which are theregions enriched with ionized electrically active centers. The photoexcitationof excess carriers within a small volume located in the probe mid-IR-laser beamenabled the visualization of the large-scale recombination-active defects likethose revealed in the optical or electron beam induced current methods. Boththese methods of the scanning mid-IR-laser microscopy are now introduced indetail in the present paper as well as a summary of techniques used in thestandard method of the lowangle mid-IR-light scattering itself. Besides thetechniques for direct observations, methods for analyses of the defectcomposition associated with the mid-IR-laser microscopy are also discussed inthe paper.

Elastic Mid-Infrared Light Scattering: a Basis for Microscopy of Large-Scale Electrically Active Defects in Semiconducting Materials