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Ex situ nonalloyed ohmic contacts were made to n‐ and p‐type GaAs using low‐temperature molecular beam epitaxy. For n‐type GaAs, Ag, and Ti/Au nonalloyed contacts displayed specific contact resistitivities of mid 10−7 Ω cm2. For p‐type GaAs, nonalloyed Ti/Au contacts with specific contact resistivities of about 10−7 Ω cm2 were obtained.

Very low resistance nonalloyed ohmic contacts using low-temperature molecular beam epitaxy of GaAs