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Low‐temperature conductivity of several samples of ZnSe grown by molecular‐beam epitaxy has been measured. The data indicate that for samples with carrier concentration below or near Nc, metal insulator transition, the conductivity obeys σ=σ0 exp[−(T0/T)s] at low temperatures with s=1/2. This behavior is a characteristic of variable‐range hopping conduction in the presence of a Coulomb gap. © 1994 American Institute of Physics

Low-temperature conductivity of epitaxial ZnSe in the impurity band regime