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The effectiveness of suppressing Be out‐diffusion from a Be‐doped GaAs layer by strained InGaAs layers using secondary ion mass spectroscopy has been evaluated. The experimental structures consist of an 800 Å Be‐doped (∼1×1019 cm−3) GaAs layer sandwiched between 80 Å InxGa1−xAs (x=0,0.1,0.25) layers. The samples were subjected to rapid thermal annealing (RTA) at 750 °C for 6 min. It is clearly observed that Be diffusion beyond the InGaAs layers is the fastest for the structure with x=0 and the slowest for the structure with x=0.25

Reduction of Be out-diffusion from heavily doped GaAs:Be layers by pseudomorphic InxGa1−xAs barrier layers