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The voltage modulation depth of a high Tc dc‐SQUID was measured at temperatures close to Tc and compared to a model by Enpuku et al. where the flux noise from the SQUID inductance is taken into account. The device was an YBa2Cu3O7 dc‐SQUID made on a bicrystal substrate of SrTiO3. The design was of the Ketchen square‐washer type with an inductance of 67 pH. Measurements were made in a temperature interval from 75 to 87 K, where the voltage modulation depth changed from 4.5 to 1.4 μV in close agreement with the model.

Influence of inductance induced noise in an YBa2Cu3O7 dc-SQUID at high operation temperatures