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Silicon dioxide thin films were prepared by a low‐temperature atmospheric‐pressure chemical vapor deposition method. The raw materials were tetrakis(diethylamino)silane and ozone in oxygen gas. The amorphous films were obtained at a substrate temperature above 200 °C. The films were superior in chemical stability and hardness to the films which were prepared from tetraethoxysilane and ozone.

Silicon dioxide thin films prepared by chemical vapor deposition from tetrakis(diethylamino)silane and ozone