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A pronounced enhancement in the electrical activation of implanted Si in GaAs is demonstrated by co‐implantation of Al. The maximum enhancement (×2) occurs when the Si distribution is shallow, there is a separation between the Si and Al distributions with the Al being deeper, the Si and Al are implanted at doses of ≤1×1013 cm−2, and subsequent annealing of the co‐implanted GaAs is performed under capless or proximity cap conditions. A model considering gettering of the oxygen present in the bulk Czochralski‐grown GaAs to the implanted Al is invoked to explain the observed activation enhancement.

Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation