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Phosphorous diffusion for approximately 1 h at 950 °C is shown to be an effective gettering procedure to remove lithium‐ion mobility reducing defects in floating‐zone p‐type silicon wafers. The removal of these defects, which can severely impede the movement of lithium ions in silicon wafers during lithium‐ion compensation process, is crucial in the fabrication of silicon lithium‐drifted radiation detectors.

Lithium-ion mobility improvement in floating-zone silicon by external gettering